Invention Grant
US09240443B2 Process of preparing a gap filler agent, a gap filler agent prepared using same, and a method for manufacturing semiconductor capacitor using the gap filler agent
有权
间隙填充剂的制备方法，使用该间隙填充剂的间隙填充剂，以及使用间隙填充剂制造半导体电容器的方法
- Patent Title: Process of preparing a gap filler agent, a gap filler agent prepared using same, and a method for manufacturing semiconductor capacitor using the gap filler agent
- Patent Title (中): 间隙填充剂的制备方法，使用该间隙填充剂的间隙填充剂，以及使用间隙填充剂制造半导体电容器的方法
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Application No.: US14144738Application Date: 2013-12-31
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Publication No.: US09240443B2Publication Date: 2016-01-19
- Inventor: Jin-Hee Bae , Han-Song Lee , Taek-Soo Kwak , Go-Un Kim , Bo-Sun Kim , Sang-Kyun Kim , Yoong-Hee Na , Eun-Su Park , Jin-Woo Seo , Hyun-Ji Song , Sang-Hak Lim , Wan-Hee Lim , Seung-Hee Hong , Byeong-Gyu Hwang
- Applicant: Jin-Hee Bae , Han-Song Lee , Taek-Soo Kwak , Go-Un Kim , Bo-Sun Kim , Sang-Kyun Kim , Yoong-Hee Na , Eun-Su Park , Jin-Woo Seo , Hyun-Ji Song , Sang-Hak Lim , Wan-Hee Lim , Seung-Hee Hong , Byeong-Gyu Hwang
- Applicant Address: KR Gumi-si, Kyeongsangbuk-do
- Assignee: CHEIL INDUSTRIES, INC.
- Current Assignee: CHEIL INDUSTRIES, INC.
- Current Assignee Address: KR Gumi-si, Kyeongsangbuk-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2012-0158681 20121231; KR10-2013-0074682 20130627
- Main IPC: C08G77/00
- IPC: C08G77/00 ; H01L49/02 ; H01L21/02
Abstract:
A method of preparing a gap filler agent includes adding a halosilane to a basic solvent, and, to the basic solvent and the halosilane, adding ammonia in an amount of about 50 to about 70 parts by weight based on 100 parts by weight of the halosilane at a rate of about 1 g/hr to about 15 g/hr.
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