Invention Grant
US09242865B2 Systems and methods for production of graphene by plasma-enhanced chemical vapor deposition
有权
通过等离子体增强化学气相沉积生产石墨烯的系统和方法
- Patent Title: Systems and methods for production of graphene by plasma-enhanced chemical vapor deposition
- Patent Title (中): 通过等离子体增强化学气相沉积生产石墨烯的系统和方法
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Application No.: US14192796Application Date: 2014-02-27
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Publication No.: US09242865B2Publication Date: 2016-01-26
- Inventor: Steven W. Sinton , Peter V. Bedworth
- Applicant: LOCKHEED MARTIN CORPORATION
- Applicant Address: US MD Bethesda
- Assignee: Lockheed Martin Corporation
- Current Assignee: Lockheed Martin Corporation
- Current Assignee Address: US MD Bethesda
- Agency: McDermott Will & Emery LLP
- Main IPC: C23C16/26
- IPC: C23C16/26 ; H05H1/24 ; C01B31/04

Abstract:
Production of bulk quantities of graphene for commercial ventures has proven difficult due to scalability issues in certain instances. Plasma-enhanced chemical vapor deposition of graphene can address at least some of these issues. Methods for production of graphene by plasma-enhanced chemical vapor deposition can include: providing a metal substrate and a carbonaceous electrode, at least a portion of the metal substrate being located proximate to the carbonaceous electrode with a gap defined therebetween; applying a potential between the metal substrate and the carbonaceous electrode; exciting a plasma-forming gas in the gap between the metal substrate and the carbonaceous electrode in the presence of the applied potential, thereby forming a plasma; ablating a reactive carbon species from the carbonaceous electrode in the presence of the plasma; and growing graphene on the metal substrate from the reactive carbon species.
Public/Granted literature
- US20140255621A1 SYSTEMS AND METHODS FOR PRODUCTION OF GRAPHENE BY PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION Public/Granted day:2014-09-11
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