Invention Grant
US09242865B2 Systems and methods for production of graphene by plasma-enhanced chemical vapor deposition 有权
通过等离子体增强化学气相沉积生产石墨烯的系统和方法

Systems and methods for production of graphene by plasma-enhanced chemical vapor deposition
Abstract:
Production of bulk quantities of graphene for commercial ventures has proven difficult due to scalability issues in certain instances. Plasma-enhanced chemical vapor deposition of graphene can address at least some of these issues. Methods for production of graphene by plasma-enhanced chemical vapor deposition can include: providing a metal substrate and a carbonaceous electrode, at least a portion of the metal substrate being located proximate to the carbonaceous electrode with a gap defined therebetween; applying a potential between the metal substrate and the carbonaceous electrode; exciting a plasma-forming gas in the gap between the metal substrate and the carbonaceous electrode in the presence of the applied potential, thereby forming a plasma; ablating a reactive carbon species from the carbonaceous electrode in the presence of the plasma; and growing graphene on the metal substrate from the reactive carbon species.
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