Invention Grant
- Patent Title: Polycrystalline silicon
- Patent Title (中): 多晶硅
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Application No.: US13711836Application Date: 2012-12-12
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Publication No.: US09242867B2Publication Date: 2016-01-26
- Inventor: Robert Baumann , Robert Hoelzl , Michael Weichselgartner
- Applicant: Wacker Chemie AG
- Applicant Address: DE Munich
- Assignee: Wacker Chemie AG
- Current Assignee: Wacker Chemie AG
- Current Assignee Address: DE Munich
- Agency: Caesar Rivise, PC
- Priority: DE102011089479 20111221
- Main IPC: C01B33/02
- IPC: C01B33/02 ; C01B33/035 ; H01L31/0368 ; C01B33/107
Abstract:
The invention provides polycrystalline silicon having concentrations of dopants of 1-10 ppta of boron, 1-20 ppta of phosphorus, 1-10 ppta of arsenic, 0.01-1 ppta of aluminum, and having a charge carrier lifetime of at least 2000 and at most 4500 μs.
Public/Granted literature
- US20130177493A1 POLYCRYSTALLINE SILICON Public/Granted day:2013-07-11
Information query
