Invention Grant
- Patent Title: High pressure chemical vapor deposition apparatuses, methods, and compositions produced therewith
- Patent Title (中): 高压化学气相沉积设备，方法和组合物
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Application No.: US13390055Application Date: 2010-08-12
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Publication No.: US09243329B2Publication Date: 2016-01-26
- Inventor: Nikolaus Dietz
- Applicant: Nikolaus Dietz
- Applicant Address: US GA Atlanta
- Assignee: Georgia State University Research Foundation, Inc.
- Current Assignee: Georgia State University Research Foundation, Inc.
- Current Assignee Address: US GA Atlanta
- Agency: Sutherland Asbill & Brennan LLP
- International Application: PCT/US2010/045329 WO 20100812
- International Announcement: WO2011/019920 WO 20110217
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L21/20 ; H01L21/36 ; C23C16/458 ; H01L21/02 ; H01L33/32 ; C23C16/455 ; C30B25/14 ; C30B29/40 ; C23C16/30
Abstract:
A composition, reactor apparatus, method, and control system for growing epitaxial layers of group III-nitride alloys. Super-atmospheric pressure is used as a process parameter to control the epitaxial layer growth where the identity of alloy layers differ within a heterostructure stack of two or more layers.
Public/Granted literature
- US20120138952A1 HIGH PRESSURE CHEMICAL VAPOR DEPOSITION APPARATUSES, METHODS, AND COMPOSITIONS PRODUCED THEREWITH Public/Granted day:2012-06-07
Information query
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