Invention Grant
- Patent Title: System and method for reducing the effects of parasitic capacitances
- Patent Title (中): 减小寄生电容影响的系统和方法
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Application No.: US13351597Application Date: 2012-01-17
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Publication No.: US09244570B2Publication Date: 2016-01-26
- Inventor: Samuel Brunet , Luben Hristov Hristov
- Applicant: Samuel Brunet , Luben Hristov Hristov
- Applicant Address: US CA San Jose
- Assignee: Atmel Corporation
- Current Assignee: Atmel Corporation
- Current Assignee Address: US CA San Jose
- Agency: Baker Botts L.L.P.
- Main IPC: G06F3/044
- IPC: G06F3/044 ; G06F3/041

Abstract:
In one embodiment, a method includes discharging a first capacitor and discharging a set of capacitances present on a first set of lines of a touch sensor. After discharging the first capacitor and the set of capacitances, the method further includes causing charge to be transferred to the set of capacitances during a first time period. After the first time period, the method includes causing charge to be transferred to the first capacitor and the set of capacitances during a second time period. After the second time period, the voltage across the first capacitor to a first threshold is compared. The method also includes determining whether a touch was detected by the touch sensor based on comparing the voltage across the first capacitor to the first threshold.
Public/Granted literature
- US20130181934A1 System And Method For Reducing The Effects Of Parasitic Capacitances Public/Granted day:2013-07-18
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