Invention Grant
- Patent Title: Pattern density-dependent mismatch modeling flow
- Patent Title (中): 模式密度相关不匹配建模流程
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Application No.: US14182852Application Date: 2014-02-18
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Publication No.: US09245073B2Publication Date: 2016-01-26
- Inventor: Chung-Min Fu , Wan-Yu Lo , Shih-Cheng Yang , Chung-Kai Lin , Yung-Chow Peng
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C
- Agent Anthony King
- Main IPC: G06F9/45
- IPC: G06F9/45 ; G06F17/50

Abstract:
In some embodiments, in a method, a layout of a circuit is received. A netlist with indicated pattern density (PD)-dependent mismatch elements associated with different PDs, respectively, is generated using the layout. A simulation on the netlist is performed such that when the PD-dependent mismatch elements are modeled in the simulation, corresponding model parameters of the PD-dependent mismatch elements are generated using variation distributions with different spreads.
Public/Granted literature
- US20150234964A1 PATTERN DENSITY-DEPENDENT MISMATCH MODELING FLOW Public/Granted day:2015-08-20
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