Invention Grant
- Patent Title: Boost system for dual-port SRAM
- Patent Title (中): 双端口SRAM的升压系统
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Application No.: US14220025Application Date: 2014-03-19
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Publication No.: US09245615B2Publication Date: 2016-01-26
- Inventor: Ching-Wei Wu , He-Zhou Wan , Ming-En Bu , Xiuli Yang , Cheng Hung Lee , Mu-Jen Huang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C.
- Agent Anthony King
- Priority: CN201410074379 20140303
- Main IPC: G11C11/419
- IPC: G11C11/419
Abstract:
A boost system for dual-port SRAM includes a comparator and a boost circuit. The comparator is configured to compare a first row address of a first port and a second row address of a second port, and output a first enable signal. The boost circuit is configured to boost a voltage difference between a first voltage source and a second voltage source according to the first enable signal.
Public/Granted literature
- US20150248928A1 BOOST SYSTEM FOR DUAL-PORT SRAM Public/Granted day:2015-09-03
Information query
IPC分类:
