Invention Grant
- Patent Title: Nonvolatile memory cells programable by phase change and method
- Patent Title (中): 通过相变和方法可编程的非易失性存储单元
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Application No.: US14469995Application Date: 2014-08-27
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Publication No.: US09245617B2Publication Date: 2016-01-26
- Inventor: Alan S. Edelstein
- Applicant: U.S. Army Research Laboratory
- Applicant Address: US DC Washington
- Assignee: The United States of America as represented by the Secretary of the Army
- Current Assignee: The United States of America as represented by the Secretary of the Army
- Current Assignee Address: US DC Washington
- Agent Lawrence E. Anderson
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00 ; G11C11/16 ; H01L27/22

Abstract:
A nonvolatile memory comprising at least one ferromagnetic region having permittivity which changes from a first state to a second state of lower permittivity upon heating; at least one heater operatively associated with the at least one ferromagnetic region which selectively provides heat to the ferromagnetic region to change its permittivity; and a plurality of connectors operatively connected to the at least one heater and adapted to be connected to a current source that provides a current which causes the heater to change the at least one ferromagnetic region from a first state to a second state. Optionally, the memory is arranged as an array of memory cells. Optionally, each cell has a magnetic field sensor operatively associated therewith. Optionally, the nonvolatile memory is radiation hard. Also, a method of recording data by heating at least one ferromagnetic region to change its permittivity.
Public/Granted literature
- US20150170739A1 NONVOLATILE MEMORY CELLS PROGRAMABLE BY PHASE CHANGE AND METHOD Public/Granted day:2015-06-18
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