Invention Grant
- Patent Title: Write pre-compensation for nonvolatile memory
- Patent Title (中): 写入非易失性存储器的预补偿
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Application No.: US14294457Application Date: 2014-06-03
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Publication No.: US09245632B1Publication Date: 2016-01-26
- Inventor: Zining Wu , Xueshi Yang , Pantas Sutardja
- Applicant: Marvell International LTD.
- Applicant Address: BM Hamilton
- Assignee: Marvell International LTD.
- Current Assignee: Marvell International LTD.
- Current Assignee Address: BM Hamilton
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/10 ; G11C11/56

Abstract:
A system including an interference module and a programming module. The interference module is configured to generate interference values based on (i) a state to which a memory cell is to be programmed and (ii) states of one or more memory cells located near the memory cell. The interference values indicate effects of the states of the one or more memory cells on the state to which the memory cell is to be programmed. The programming module is configured to determine a programming value to program the memory cell to the state based on one or more of the interference values. The one or more of the interference values are selected based on (i) the state to which the memory cell is to be programmed, and (ii) the states of the one or more memory cells.
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