Invention Grant
- Patent Title: One-time programmable memory cell and circuit
- Patent Title (中): 一次性可编程存储单元和电路
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Application No.: US14320256Application Date: 2014-06-30
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Publication No.: US09245647B2Publication Date: 2016-01-26
- Inventor: Eric Braun , Da Chen
- Applicant: Chengdu Monolithic Power Systems Co., Ltd.
- Applicant Address: CN Chengdu
- Assignee: Chengdu Monolithic Power Systems Co., Ltd.
- Current Assignee: Chengdu Monolithic Power Systems Co., Ltd.
- Current Assignee Address: CN Chengdu
- Agency: Perkins Coie LLP
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C7/10 ; G11C17/00 ; G11C7/06 ; G11C17/18 ; G11C17/16 ; G11C7/08 ; H01L27/112 ; H01L27/105
Abstract:
An OTP memory cell and an OTP memory circuit. The OTP memory cell having a memory module, a write module, a read module, and a load module. Data may be written into the memory module once the write module is active; and data may be read out of the memory module once the read module is active. The OTP memory cell may also have a first latch module and a second latch module.
Public/Granted literature
- US20150380103A1 ONE-TIME PROGRAMMABLE MEMORY CELL AND CIRCUIT Public/Granted day:2015-12-31
Information query
