Invention Grant
US09245749B2 Method of forming Ga2O3-based crystal film and crystal multilayer structure
有权
形成Ga2O3基晶体膜和晶体多层结构的方法
- Patent Title: Method of forming Ga2O3-based crystal film and crystal multilayer structure
- Patent Title (中): 形成Ga2O3基晶体膜和晶体多层结构的方法
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Application No.: US14581893Application Date: 2014-12-23
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Publication No.: US09245749B2Publication Date: 2016-01-26
- Inventor: Kohei Sasaki , Masataka Higashiwaki
- Applicant: TAMURA CORPORATION , National Institute of Information and Communications Technology
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: TAMURA CORPORATION,NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY
- Current Assignee: TAMURA CORPORATION,NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2013-265771 20131224
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/02 ; H01L29/24 ; C30B23/02 ; C30B25/18 ; C30B25/20 ; C30B29/16 ; H01L29/78 ; H01L29/778 ; H01L29/812 ; H01L29/872
Abstract:
A method of forming a Ga2O3-based crystal film includes epitaxially growing a Ga2O3-based crystal film on a (001)-oriented principal surface of a Ga2O3-based substrate at a growth temperature of not less than 750° C. A crystal multilayer structure includes a Ga2O3-based substrate with a (001)-oriented principal surface, and a Ga2O3-based crystal film formed on the principal surface of the Ga2O3-based substrate by epitaxial growth. The principal surface has a flatness of not more than 1 nm in an RMS value.
Public/Granted literature
- US20150179445A1 Method of Forming Ga2O3-Based Crystal Film and Crystal Multilayer Structure Public/Granted day:2015-06-25
Information query
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