Invention Grant
- Patent Title: Method for fabricating silicon-doped or boron-doped aluminum electrode
- Patent Title (中): 制造掺硅或硼掺杂铝电极的方法
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Application No.: US14330048Application Date: 2014-07-14
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Publication No.: US09245758B2Publication Date: 2016-01-26
- Inventor: Wei-Yang Ma , Chien-Chang Chao , Guan-Lin Chen , Tsun-Neng Yang
- Applicant: ATOMIC ENERGY COUNCIL-INSTITUTE OF NUCLEAR ENERGY RESEARCH
- Applicant Address: TW Taoyuan County
- Assignee: Atomic Energy Council-Institute of Nuclear Energy Research
- Current Assignee: Atomic Energy Council-Institute of Nuclear Energy Research
- Current Assignee Address: TW Taoyuan County
- Agency: Rosenberg, Klein & Lee
- Priority: TW102132761A 20130911
- Main IPC: H01L31/18
- IPC: H01L31/18 ; H01L21/268 ; H01L21/285 ; H01L31/0224 ; H01L31/068

Abstract:
A method for fabricating a silicon-doped or boron-doped aluminum electrode is revealed. Aluminum target or aluminum paste prepared by selectively doped with silicon and/or boron is arranged at a silicon wafer with a passivation layer by physical deposition or screen printing. Then the doped aluminum layer is melted in linear or dot pattern to pass through the passivation layer and contact with the silicon wafer. Thus contact resistance between an aluminum back electrode and the silicon wafer of crystalline silicon solar cells is reduced and acceptor concentration on a surface layer of the silicon wafer is increased. Therefore the process speed is faster and the energy conversion efficiency of the solar cell is improved.
Public/Granted literature
- US20150072468A1 METHOD FOR FABRICATING SILICON-DOPED OR BORON-DOPED ALUMINUM ELECTRODE Public/Granted day:2015-03-12
Information query
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