Apparatus and method of applying a film to a semiconductor wafer and method of processing a semiconductor wafer

Invention Grant

US09245765B2 Apparatus and method of applying a film to a semiconductor wafer and method of processing a semiconductor wafer 有权

Title translation: 将膜施加到半导体晶片的方法和方法以及半导体晶片的处理方法

Patent Title: Apparatus and method of applying a film to a semiconductor wafer and method of processing a semiconductor wafer
Patent Title (中): 将膜施加到半导体晶片的方法和方法以及半导体晶片的处理方法
Application No.: US13394812

Application Date: 2010-10-14
Publication No.: US09245765B2

Publication Date: 2016-01-26
Inventor: Florian Bieck
Applicant: Florian Bieck
Applicant Address: US DE Wilmington
Assignee: EMPIRE TECHNOLOGY DEVELOPMENT LLC
Current Assignee: EMPIRE TECHNOLOGY DEVELOPMENT LLC
Current Assignee Address: US DE Wilmington
Agency: Ren-Sheng International
Priority: SG200906937-8 20091016
International Application: PCT/SG2010/000395 WO 20101014
International Announcement: WO2011/046517 WO 20110421
Main IPC: H01L23/48
IPC: H01L23/48 ; B32B37/10 ; B32B38/10 ; H01L21/31 ; H01L21/67 ; H01L21/768

Abstract:

Implementations and techniques for applying a film to a semiconductor wafer and for processing a semiconductor wafer are generally disclosed.

Abstract(Chinese):

通常公开了将膜施加到半导体晶片和用于处理半导体晶片的实施方式和技术。

Public/Granted literature

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L23/00	半导体或其他固态器件的零部件（H01L25/00优先）
H01L23/48	.用于向或自处于工作中的固态物体通电的装置，例如引线或接线端装置