Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14109464Application Date: 2013-12-17
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Publication No.: US09245774B2Publication Date: 2016-01-26
- Inventor: Masanori Onodera
- Applicant: Spansion LLC
- Applicant Address: US CA San Jose
- Assignee: Cypress Semiconductor Corporation
- Current Assignee: Cypress Semiconductor Corporation
- Current Assignee Address: US CA San Jose
- Priority: JP2006-353411 20061227
- Main IPC: H01L21/48
- IPC: H01L21/48 ; H01L23/10 ; H01L29/40 ; H01L21/56

Abstract:
The present invention provides a semiconductor device with an improved yield ratio and reduced height and manufacturing cost; and a method of manufacturing the semiconductor device. According to an aspect of the present invention, there is provided a semiconductor device including a substrate, a semiconductor element that is flip-chip connected to the substrate, and a molding portion that seals the semiconductor element. The side surfaces of the semiconductor element are enclosed by the molding portion. An upper surface of the semiconductor element is not enclosed by the molding portion. Damage to the side surfaces of the semiconductor element caused by an external impact when the semiconductor device is stored is minimized, because the molding portion protects the side surfaces of the semiconductor element. Accordingly, the yield ratio of the semiconductor device is improved. The height of the semiconductor device can also be reduced since the upper surface of the semiconductor element is not enclosed with the molding portion.
Public/Granted literature
- US20140120662A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2014-05-01
Information query
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