Invention Grant
- Patent Title: Semiconductor reflow processing for high aspect ratio fill
- Patent Title (中): 用于高纵横比填充的半导体回流加工
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Application No.: US13801860Application Date: 2013-03-13
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Publication No.: US09245798B2Publication Date: 2016-01-26
- Inventor: Ismail T. Emesh , Robert C. Linke
- Applicant: APPLIED Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED Matrials, Inc.
- Current Assignee: APPLIED Matrials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Christensen O'Connor Johnsoon PLLC Kindnes PLLC
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/768 ; H01L21/321
Abstract:
A method for at least partially filling a feature on a workpiece includes obtaining a workpiece including a feature having a high aspect ratio in the range of about 10 to about 80, depositing a first conformal conductive layer in the feature, and thermally treating the workpiece to reflow the first conformal conductive layer in the feature.
Public/Granted literature
- US20130320505A1 SEMICONDUCTOR REFLOW PROCESSING FOR HIGH ASPECT RATIO FILL Public/Granted day:2013-12-05
Information query
IPC分类:
