To provide a technique adopting a TSV technique, capable of improving manufacturing yield and reliability of semiconductor devices. By partitioning a connection pad-forming region into a plurality of regions and by forming, respectively, connection pads 17 having a relatively small planar area, spaced apart from an adjacent connection pad 17 in each of partitioned regions, dishing generated in the connection pad 17 is lightened. In addition, by not forming a through hole 23 for forming a through electrode 27 in an interlayer insulating film 9 covering a semiconductor element, intrusion of H2O, a metal ion such as Na+ or K+, etc. into an element-forming region from the through hole, via the interlayer insulating film is prevented.