Invention Grant
US09245813B2 Horizontally aligned graphite nanofibers in etched silicon wafer troughs for enhanced thermal performance
有权
在蚀刻的硅晶圆槽中采用水平对准的石墨纳米纤维，以提高热性能
- Patent Title: Horizontally aligned graphite nanofibers in etched silicon wafer troughs for enhanced thermal performance
- Patent Title (中): 在蚀刻的硅晶圆槽中采用水平对准的石墨纳米纤维，以提高热性能
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Application No.: US13754149Application Date: 2013-01-30
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Publication No.: US09245813B2Publication Date: 2016-01-26
- Inventor: Gerald K. Bartley , Charles L. Johnson , John E. Kelly, III , Joseph Kuczynski , David R. Motschman , Arvind K Sinha , Kevin A. Splittstoesser , Timothy A. Tofil
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Stachler Intellectual Property Law LLC
- Main IPC: H01L23/34
- IPC: H01L23/34 ; H01L23/00 ; H01L23/373 ; H01L23/36 ; H01L23/42 ; H01L23/427 ; H01L21/48 ; H01L25/065 ; H01L23/48
Abstract:
The chip stack of semiconductor chips with enhanced cooling apparatus includes a first chip with circuitry on a first side and a second chip electrically and mechanically coupled to the first chip by a grid of connectors. The apparatus further includes a thermal interface material pad between the first chip and the second chip, wherein the thermal interface material pad includes nanofibers aligned parallel to mating surfaces of the first chip and the second chip, and a heat removal device thermally connected to the thermal interface material pad.
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