Invention Grant
- Patent Title: Semiconductor element
- Patent Title (中): 半导体元件
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Application No.: US14601541Application Date: 2015-01-21
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Publication No.: US09245838B2Publication Date: 2016-01-26
- Inventor: Hajime Sakamoto , Dongdong Wang
- Applicant: IBIDEN CO., LTD.
- Applicant Address: JP Ogaki-shi
- Assignee: IBIDEN CO., LTD.
- Current Assignee: IBIDEN CO., LTD.
- Current Assignee Address: JP Ogaki-shi
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2000-290231 20000925; JP2000-290232 20000925; JP2000-382806 20001215; JP2000-382807 20001215; JP2000-382813 20001215; JP2000-382814 20001215
- Main IPC: H01L23/49
- IPC: H01L23/49 ; H01L23/498 ; H01L21/56 ; H01L21/683 ; H01L23/538 ; H01L23/00 ; H05K1/18 ; H05K3/46

Abstract:
A multilayer device has a resin layer, a semiconductor device positioned in the resin layer and including an electronic component and a passivation layer having an opening exposing an electrode of the electronic component, an intermediate layer including metal layers and formed in the opening of the passivation layer such that the intermediate layer is connected to the electrode of the electronic component, and a buildup layer formed on the resin layer and including an insulating layer and a via conductor formed in the insulating layer such that the via conductor is connected to the intermediate layer. The resin layer includes one or more resin material selected from the group consisting of a thermosetting resin material and a thermoplastic resin material.
Public/Granted literature
- US20150130079A1 SEMICONDUCTOR ELEMENT Public/Granted day:2015-05-14
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