Invention Grant
US09245838B2 Semiconductor element 有权
半导体元件

Semiconductor element
Abstract:
A multilayer device has a resin layer, a semiconductor device positioned in the resin layer and including an electronic component and a passivation layer having an opening exposing an electrode of the electronic component, an intermediate layer including metal layers and formed in the opening of the passivation layer such that the intermediate layer is connected to the electrode of the electronic component, and a buildup layer formed on the resin layer and including an insulating layer and a via conductor formed in the insulating layer such that the via conductor is connected to the intermediate layer. The resin layer includes one or more resin material selected from the group consisting of a thermosetting resin material and a thermoplastic resin material.
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