Invention Grant
- Patent Title: Semiconductor device and fabricating process for the same
- Patent Title (中): 半导体器件及其制造工艺相同
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Application No.: US13553535Application Date: 2012-07-19
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Publication No.: US09245841B2Publication Date: 2016-01-26
- Inventor: Chien-Hua Huang , Chung-Ju Lee , Tsung-Min Huang
- Applicant: Chien-Hua Huang , Chung-Ju Lee , Tsung-Min Huang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L35/24 ; H01L51/00 ; H01L23/522 ; H01L23/532 ; H01L21/768
Abstract:
A semiconductor device and a fabricating process for the same are provided. The semiconductor device includes a base layer having a part of a reactive material; and a self-assembled protecting layer of a self-assembled molecule reacting with the reactive material formed over the part.
Public/Granted literature
- US20140021612A1 SEMICONDUCTOR DEVICE AND FABRICATING PROCESS FOR THE SAME Public/Granted day:2014-01-23
Information query
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