A semiconductor device includes a wiring substrate. The wiring substrate includes a first surface, a second surface located at an opposite side of the first surface, a cavity formed in the first surface, an electrode pad formed on the first surface surrounding the cavity, and a high frequency wire exposed on the first surface. A semiconductor element is accommodated in the cavity. A bonding wire connects the semiconductor element and the electrode pad. A first protection film is arranged on the first surface of the wiring substrate to cover the first surface, the semiconductor element, the electrode pad, the bonding wire, and the high frequency wire.