Invention Grant
- Patent Title: Bidirectional dual-SCR circuit for ESD protection
- Patent Title (中): 用于ESD保护的双向双SCR电路
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Application No.: US14251670Application Date: 2014-04-14
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Publication No.: US09245878B2Publication Date: 2016-01-26
- Inventor: Ming-Hsiang Song , Jam-Wem Lee , Tzu-Heng Chang , Yu-Ying Hsu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H01L23/62
- IPC: H01L23/62 ; H01L27/02

Abstract:
An ESD protection circuit includes at least a first and a second silicon controlled rectifier (SCR) circuits. The first SCR circuit is coupled between the pad and the positive power supply terminal. The second SCR circuit is coupled between the pad and the ground terminal. At least one of the SCR circuits is configured to selectively provide a short or relatively conductive electrical path between the pad and one of the positive power supply terminal and the ground terminal.
Public/Granted literature
- US20140217461A1 BIDIRECTIONAL DUAL-SCR CIRTCUIT FOR ESD PROTECTION Public/Granted day:2014-08-07
Information query
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