Invention Grant
- Patent Title: Static discharge system
- Patent Title (中): 静电放电系统
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Application No.: US13537443Application Date: 2012-06-29
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Publication No.: US09245879B2Publication Date: 2016-01-26
- Inventor: Alexey Kudymov , Jamal Ramdani
- Applicant: Alexey Kudymov , Jamal Ramdani
- Applicant Address: US CA San Jose
- Assignee: POWER INTEGRATIONS, INC.
- Current Assignee: POWER INTEGRATIONS, INC.
- Current Assignee Address: US CA San Jose
- Agency: Mayer & Williams PC
- Agent Stuart H. Mayer
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L27/06 ; H01L29/778 ; H01L29/20

Abstract:
A semiconductor circuit includes a three-terminal high voltage semiconductor device, a charge distribution structure and a static discharge system. The charge distribution structure has a plurality of conductors with a floating potential. The charge distribution structure is capacitively coupled to a first terminal of the semiconductor device. The static discharge system removes charge that accumulates on at least a subset of the conductors. The static discharge system removes the charge that accumulates on the subset of conductors when the semiconductor device is in a first state while allowing charge to accumulate on the subset of conductors when the semiconductor device is in a second state.
Public/Granted literature
- US20140001515A1 STATIC DISCHARGE SYSTEM Public/Granted day:2014-01-02
Information query
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