Invention Grant
- Patent Title: Method and apparatus for low resistance image sensor contact
- Patent Title (中): 用于低电阻图像传感器接触的方法和装置
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Application No.: US13890763Application Date: 2013-05-09
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Publication No.: US09245912B2Publication Date: 2016-01-26
- Inventor: Min-Feng Kao , Dun-Nian Yaung , Jen-Cheng Liu , Feng-Chi Hung , Chun-Chieh Chuang , Shuang-Ji Tsai , Jeng-Shyan Lin
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
A method and apparatus for a low resistance image sensor contact, the apparatus comprising a photosensor disposed in a substrate, a first ground well disposed in a first region of the substrate, the first ground well having a resistance lower than the substrate, and a ground line disposed in a region adjacent to the first ground well. The first ground well is configured to provide a low resistance path to the ground line from the substrate for excess free carriers in the first region of the substrate. The apparatus may optionally comprise a second ground well having a lower resistance than the first ground well and disposed between the first ground well and the ground line, and may further optionally comprise a third ground well having a lower resistance than the second ground well and disposed between the second ground well and the ground line.
Public/Granted literature
- US20140264504A1 Method and Apparatus for Low Resistance Image Sensor Contact Public/Granted day:2014-09-18
Information query
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