Invention Grant
- Patent Title: Phase change memory element
- Patent Title (中): 相变存储元件
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Application No.: US14522057Application Date: 2014-10-23
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Publication No.: US09245924B2Publication Date: 2016-01-26
- Inventor: Frederick T. Chen , Ming-Jinn Tsai
- Applicant: HIGGS OPL. CAPITAL LLC
- Applicant Address: US DE Dover
- Assignee: HIGGS OPL. CAPITAL LLC
- Current Assignee: HIGGS OPL. CAPITAL LLC
- Current Assignee Address: US DE Dover
- Agency: Schwabe Williamson & Wyatt
- Main IPC: H01L47/00
- IPC: H01L47/00 ; H01L27/24 ; H01L45/00

Abstract:
A phase-change memory element with an electrically isolated conductor is provided. The phase-change memory element includes: a first electrode and a second electrode; a phase-change material layer electrically connected to the first electrode and the second electrode; and at least two electrically isolated conductors, disposed between the first electrode and the second electrode, directly contacting the phase-change material layers.
Public/Granted literature
- US20150041752A1 PHASE CHANGE MEMORY ELEMENT Public/Granted day:2015-02-12
Information query
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