Invention Grant
- Patent Title: Semiconductor structure having interfacial layer and high-k dielectric layer
- Patent Title (中): 具有界面层和高k电介质层的半导体结构
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Application No.: US14641698Application Date: 2015-03-09
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Publication No.: US09245970B2Publication Date: 2016-01-26
- Inventor: Liang-Gi Yao , Chun-Hu Cheng , Chen-Yi Lee , Jeff J. Xu , Clement Hsingjen Wann
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW
- Agency: Hauptman Ham, LLP
- Main IPC: H01L29/51
- IPC: H01L29/51 ; H01L21/02 ; H01L29/423 ; H01L29/78 ; H01L21/28 ; H01L21/283
Abstract:
A semiconductor structure includes a semiconductor substrate. The semiconductor structure further includes an interfacial layer over the semiconductor substrate, the interfacial layer having a capacitive effective thickness of less than 1.37 nanometers (nm). The semiconductor structure further includes a high-k dielectric layer over the interfacial layer.
Public/Granted literature
- US20150187902A1 SEMICONDUCTOR STRUCTURE HAVING INTERFACIAL LAYER AND HIGH-K DIELECTRIC LAYER Public/Granted day:2015-07-02
Information query
IPC分类:
