One embodiment of the instant disclosure provides a method for fabrication of fin devices for an integrated circuit, which comprises: forming a plurality of semiconductor fin structures, the fin structures including sidewalls and tops exposed from conformal masking; performing channel implantation at a tilt angle to form a doped region along the sidewalls and the tops of the fin structures, the fin structures being maintained at an elevated temperature during the channel implantation to prevent amorphization thereof during channel implantation; and forming at least one field effect transistor from the fin structures, the field effect transistor having a threshold voltage that is based on the channel implantation.