Invention Grant
- Patent Title: Silicon-compatible germanium-based transistor with high-hole-mobility
- Patent Title (中): 硅相容锗基晶体管具有高空穴迁移率
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Application No.: US14556327Application Date: 2014-12-01
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Publication No.: US09245990B2Publication Date: 2016-01-26
- Inventor: Seongjae Cho , Byung-Gook Park
- Applicant: Gachon University of Industry-Academic cooperation Foundation , Seoul National University R&DB Foundation
- Applicant Address: KR KR
- Assignee: Gachon University of Industry-Academic cooperation Foundation,Seoul National University R&DB Foundation
- Current Assignee: Gachon University of Industry-Academic cooperation Foundation,Seoul National University R&DB Foundation
- Current Assignee Address: KR KR
- Agent Gerald E. Hespos; Michael J. Porco; Matthew T. Hespos
- Priority: KR10-2013-0147924 20131129
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/12
Abstract:
The present invention provides a silicon-compatible germanium-based high-hole-mobility transistor with high-hole-mobility germanium channel comprising a semiconductor material having a valence band offset instead of the conventional gate insulating film, a germanium channel region, and a quantum well formed by heterojunctions of the upper and lower portions of the germanium channel on a silicon substrate. Thus, the present invention enables to gain maximum hole mobility of the germanium channel by using the two-dimensional hole gas gathered into the quantum well for high-speed and low-power operations and device reliability improvement.
Public/Granted literature
- US20150155376A1 SILICON-COMPATIBLE GERMANIUM-BASED TRANSISTOR WITH HIGH-HOLE-MOBILITY Public/Granted day:2015-06-04
Information query
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