Invention Grant
US09245997B2 Method of fabricating a LDMOS device having a first well depth less than a second well depth
有权
制造具有小于第二阱深度的第一阱深度的LDMOS器件的方法
- Patent Title: Method of fabricating a LDMOS device having a first well depth less than a second well depth
- Patent Title (中): 制造具有小于第二阱深度的第一阱深度的LDMOS器件的方法
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Application No.: US14453246Application Date: 2014-08-06
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Publication No.: US09245997B2Publication Date: 2016-01-26
- Inventor: Francois Hebert , I-Shan Sun , Young Bae Kim , Young Ju Kim , Kwang Il Kim , In Taek Oh , Jin Woo Moon
- Applicant: MagnaChip Semiconductor, Ltd.
- Applicant Address: KR Cheongju-si
- Assignee: Magnachip Semiconductor, Ltd.
- Current Assignee: Magnachip Semiconductor, Ltd.
- Current Assignee Address: KR Cheongju-si
- Priority: KR10-2013-0095040 20130809; KR10-2014-0022069 20140225
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/06 ; H01L21/266 ; H01L29/66 ; H01L29/10 ; H01L29/08
Abstract:
A method of fabricating a semiconductor device capable of increasing a breakdown voltage without an additional epitaxial layer or buried layer with respect to a high-voltage horizontal MOSFET.
Public/Granted literature
- US20150041894A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE Public/Granted day:2015-02-12
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