Thin film transistor substrate

Invention Grant

US09246010B2 Thin film transistor substrate 有权

Title translation: 薄膜晶体管基板

Please log in to see more content

Patent Title: Thin film transistor substrate
Patent Title (中): 薄膜晶体管基板
Application No.: US13698750

Application Date: 2011-05-24
Publication No.: US09246010B2

Publication Date: 2016-01-26
Inventor: Katsunori Misaki
Applicant: Katsunori Misaki
Applicant Address: JP Osaka
Assignee: Sharp Kabushiki Kaisha
Current Assignee: Sharp Kabushiki Kaisha
Current Assignee Address: JP Osaka
Agency: Keating & Bennett, LLP
Priority: JP2010-159529 20100714
International Application: PCT/JP2011/002881 WO 20110524
International Announcement: WO2012/008080 WO 20120119
Main IPC: H01L29/786
IPC: H01L29/786 ; G02F1/1368 ; H01L27/12 ; G02F1/1345 ; G02F1/1362

Abstract:

In an oxide semiconductor layer, a degree of oxidation S1 of a portion located on the side of the gate insulating film, and a degree of oxidation S2 of surface layer portions located in connection regions with source and drain electrodes have a relation of S2

Abstract(Chinese):

在氧化物半导体层中，位于栅极绝缘膜侧的部分的氧化度S1和位于与源极和漏极的连接区域中的表面层部分的氧化度S2具有S2

Public/Granted literature

US20130063675A1 THIN FILM TRANSISTOR SUBSTRATE Public/Granted day:2013-03-14

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76	...单极器件
H01L29/772	....场效应晶体管
H01L29/78	.....由绝缘栅产生场效应的
H01L29/786	......薄膜晶体管