Invention Grant
- Patent Title: High efficiency rectifier
- Patent Title (中): 高效率整流器
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Application No.: US13328882Application Date: 2011-12-16
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Publication No.: US09246019B2Publication Date: 2016-01-26
- Inventor: Lee Spencer Riley , Ze Rui Chen
- Applicant: Lee Spencer Riley , Ze Rui Chen
- Applicant Address: US TX Plano
- Assignee: Diodes Incorporated
- Current Assignee: Diodes Incorporated
- Current Assignee Address: US TX Plano
- Main IPC: H01L21/04
- IPC: H01L21/04 ; H01L29/861 ; H01L29/66 ; H01L29/06 ; H01L29/40 ; H01L29/872
Abstract:
A method for forming a rectifier device is provided. The method forms a first layer on a substrate, a second layer is formed on the first layer and a photoresist layer is deposited on the second layer in which a plurality of trench patterns are formed. A plurality of trenches are formed in the first layer and the second layer by etching based on the trench patterns in the photoresist. The method then laterally etches the second layer to expose a corner portion of the first layer at mesas formed in between the two trenches. A portion of the second layer is preserved at an edge of the rectifier device.
Public/Granted literature
- US20120156862A1 HIGH EFFICIENCY RECTIFIER Public/Granted day:2012-06-21
Information query
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