Invention Grant
- Patent Title: Method for fabricating nano-patterned substrate for high-efficiency nitride-based light-emitting diode
- Patent Title (中): 制造高效氮化物系发光二极管的纳米图案基板的方法
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Application No.: US14394739Application Date: 2013-04-17
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Publication No.: US09246050B2Publication Date: 2016-01-26
- Inventor: Hyuk-Jin Cha , Heon Lee , Eun-Seo Choi
- Applicant: HUNETPLUS CO., LTD.
- Applicant Address: KR Nonsan
- Assignee: HUNETPLUS CO., LTD.
- Current Assignee: HUNETPLUS CO., LTD.
- Current Assignee Address: KR Nonsan
- Agency: Mintz Levin Cohn Ferris Glovsky and Popeo, P.C.
- Agent Kongsik Kim
- Priority: KR10-2012-0040785 20120419
- International Application: PCT/KR2013/003233 WO 20130417
- International Announcement: WO2013/157842 WO 20131024
- Main IPC: H01L27/15
- IPC: H01L27/15 ; H01L33/00 ; H01L21/02 ; H01L21/3105 ; H01L21/311 ; H01L33/20 ; H01L33/22 ; H01L33/12
Abstract:
Provided is a method of manufacturing a substrate for a light emitting diode including a convex section forming step and a crystallization/crystallizing step. According to the method and the substrate for the light emitting diode, light extraction is significantly improved and nano to micron sized pattern, economically formed.
Public/Granted literature
- US20150093847A1 METHOD FOR FABRICATING NANO-PATTERNED SUBSTRATE FOR HIGH-EFFICIENCY NITRIDE-BASED LIGHT-EMITTING DIODE Public/Granted day:2015-04-02
Information query
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