A conductive bridge memory system and method of manufacture thereof including: providing a dielectric layer having a hole on a bottom electrode, the hole over the bottom electrode; forming an ionic source layer in the hole and over the bottom electrode including: depositing a reactivation layer over the bottom electrode, depositing a first ion source layer on the reactivation layer, depositing another of the reactivation layer on the first ion source layer, depositing a second ion source layer on the another of the reactivation layer; and forming an upper electrode on the ionic source layer.