Invention Grant
- Patent Title: Phase change memory cell with self-aligned vertical heater and low resistivity interface
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Application No.: US12496503Application Date: 2009-07-01
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Publication No.: US09246093B2Publication Date: 2016-01-26
- Inventor: Barbara Zanderighi , Francesco Pipia
- Applicant: Barbara Zanderighi , Francesco Pipia
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01L47/00
- IPC: H01L47/00 ; H01L45/00 ; H01L27/24 ; G11C13/00

Abstract:
A low resistivity interface material is provided between a self-aligned vertical heater element and a contact region of a selection device. A phase change chalcogenide material is deposited directly on the vertical heater element. In an embodiment, the vertical heater element in L-shaped, having a curved vertical wall along the wordline direction and a horizontal base. In an embodiment, the low resistivity interface material is deposited into a trench with a negative profile using a PVD technique. An upper surface of the low resistivity interface material may have a tapered bird-beak extension.
Public/Granted literature
- US08981336B2 Phase change memory cell with self-aligned vertical heater and low resistivity interface Public/Granted day:2015-03-17
Information query
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