Invention Grant
- Patent Title: Semiconductor laser element and method of manufacturing the same
- Patent Title (中): 半导体激光元件及其制造方法
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Application No.: US14500658Application Date: 2014-09-29
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Publication No.: US09246306B2Publication Date: 2016-01-26
- Inventor: Atsushi Tanaka , Mitsuhiro Nonaka
- Applicant: NICHIA CORPORATION
- Applicant Address: JP Anan-Shi
- Assignee: NICHIA CORPORATION
- Current Assignee: NICHIA CORPORATION
- Current Assignee Address: JP Anan-Shi
- Agency: Foley & Lardner LLP
- Priority: JP2013-205924 20130930
- Main IPC: H01S3/00
- IPC: H01S3/00 ; H01S5/042 ; H01S5/02 ; H01S5/22 ; H01S5/323

Abstract:
A semiconductor laser element includes a substrate; a semiconductor layer formed on a front surface of the substrate; a first electrode formed on a back surface of the substrate; a second electrode formed on a front surface of the semiconductor layer; and at least one mark configured to allow reading of predetermined information, the at least one mark being formed in at least one of (i) a position on the surface on which the first electrode is formed, spaced apart from the first electrode and (ii) a position on the surface on which the second electrode is formed, spaced apart from the second electrode. The at least one mark is made of a metal material and has a thickness smaller than a thickness of the electrode that is formed on the surface on which the at least one mark is formed.
Public/Granted literature
- US20150092804A1 SEMICONDUCTOR LASER ELEMENT AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2015-04-02
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