Invention Grant
- Patent Title: Current limit protection circuits for use with depletion MOSFET
- Patent Title (中): 用于耗尽MOSFET的限流保护电路
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Application No.: US14053165Application Date: 2013-10-14
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Publication No.: US09246379B1Publication Date: 2016-01-26
- Inventor: Siew Yong Chui , Tong Wei Lian
- Applicant: Marvell International Ltd.
- Applicant Address: BM Hamilton
- Assignee: Marvell International Ltd.
- Current Assignee: Marvell International Ltd.
- Current Assignee Address: BM Hamilton
- Main IPC: H02M7/36
- IPC: H02M7/36 ; H02M7/62 ; H02M7/517 ; H02M1/36 ; H02M7/06

Abstract:
Aspects of the disclosure provide a circuit that can include a depletion mode transistor coupled to a power source and a current path coupled with the depletion mode transistor in series to provide a current to charge a capacitor. Further, a gate terminal of the depletion mode transistor is coupled to a clamping path that includes a diode and a switch that connected in series. The clamping path clamps the voltage at the gate terminal of the depletion mode transistor to the capacitor. The clamping and the current paths respectively have a first resistance during a first stage, such as when the circuit initially receives power, and have a second resistance during a second stage when the capacitor is charged to have a predetermined voltage level.
Information query
IPC分类: