Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13346925Application Date: 2012-01-10
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Publication No.: US09246444B2Publication Date: 2016-01-26
- Inventor: Masatoshi Hase , Kiichiro Takenaka , Hidetoshi Matsumoto , Shun Imai
- Applicant: Masatoshi Hase , Kiichiro Takenaka , Hidetoshi Matsumoto , Shun Imai
- Applicant Address: JP Kyoto
- Assignee: MURATA MANUFACTURING CO., LTD.
- Current Assignee: MURATA MANUFACTURING CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Mattingly & Malur, PC
- Priority: JP2011-005646 20110114
- Main IPC: H03F1/56
- IPC: H03F1/56 ; H01P5/12 ; H03F3/195 ; H03F3/21 ; H03F3/24 ; H03H7/38 ; H03H7/48

Abstract:
When a power amplifier mounted in mobile communications equipment, such as a mobile-phone, is composed of a balanced amplifier, technology with which the loss of the electric power composition in a power combiner can be reduced is provided. According to the technical idea of the present embodiment, by dividing an isolation capacitor element into two capacitor elements with high symmetry and coupled in parallel, it is possible to make almost equal parasitic capacitance arising from these capacitor elements, even when the capacitor elements are formed as interlayer capacitor elements of the wiring substrate.
Public/Granted literature
- US20120182086A1 SEMICONDUCTOR DEVICE Public/Granted day:2012-07-19
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