Invention Grant
US09246449B2 Power MOSFETs with improved efficiency for multi-channel class D audio amplifiers and packaging therefor
有权
功率MOSFET具有改进的多通道D类音频放大器的效率和包装
- Patent Title: Power MOSFETs with improved efficiency for multi-channel class D audio amplifiers and packaging therefor
- Patent Title (中): 功率MOSFET具有改进的多通道D类音频放大器的效率和包装
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Application No.: US14087555Application Date: 2013-11-22
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Publication No.: US09246449B2Publication Date: 2016-01-26
- Inventor: Richard K. Williams
- Applicant: ADVANCED ANALOGIC TECHNOLOGIES INCORPORATED
- Applicant Address: US CA Santa Clara
- Assignee: ADVANCED ANALOGIC TECHNOLOGIES INCORPORATED
- Current Assignee: ADVANCED ANALOGIC TECHNOLOGIES INCORPORATED
- Current Assignee Address: US CA Santa Clara
- Agency: Lando & Anastasi, LLP
- Main IPC: H03F3/217
- IPC: H03F3/217 ; H01L29/78 ; H03F1/02 ; H03F3/68 ; H03F3/185 ; H01L23/367 ; H01L23/495 ; H01L23/00 ; H01L27/092 ; H01L29/40 ; H01L29/423

Abstract:
A stereo class-D audio system includes a first die including four monolithically integrated NMOS high-side devices and a second a second die including, four monolithically integrated PMOS low-side devices. The audio system also includes a set of electrical contacts for connecting the high and low-side devices to components within the a stereo class-D audio system, the set of electrical contacts including at least one supply contact for connecting the drains of the high-side devices to a supply voltage (Vcc) and at least one ground contact for connecting the drains of the low-side devices to ground, the electrical contacts also including respective contacts for each source of the high and low-side devices allowing the source of each high-side device to be connected to the source of a respective low-side device to form two H-bridge circuits.
Public/Granted literature
- US20140203870A1 POWER MOSFETS WITH IMPROVED EFFICIENCY FOR MULTI-CHANNEL CLASS D AUDIO AMPLIFIERS AND PACKAGING THEREFOR Public/Granted day:2014-07-24
Information query
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