Invention Grant
- Patent Title: Manufacturing method of piezoelectric-body film, and piezoelectric-body film manufactured by the manufacturing method
- Patent Title (中): 压电体膜的制造方法以及由该制造方法制造的压电体膜
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Application No.: US13380995Application Date: 2010-06-30
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Publication No.: US09246461B2Publication Date: 2016-01-26
- Inventor: Morito Akiyama , Kazuhiko Kano , Akihiko Teshigahara
- Applicant: Morito Akiyama , Kazuhiko Kano , Akihiko Teshigahara
- Applicant Address: JP Aichi JP Tokyo
- Assignee: DENSO CORPORATION,NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Current Assignee: DENSO CORPORATION,NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Current Assignee Address: JP Aichi JP Tokyo
- Priority: JP2009-157031 20090701
- International Application: PCT/JP2010/061162 WO 20100630
- International Announcement: WO2011/002028 WO 20110106
- Main IPC: C23C14/00
- IPC: C23C14/00 ; H03H3/02 ; C23C14/06
Abstract:
A method for manufacturing a piezoelectric thin film including an aluminum nitride thin film containing scandium on a substrate, the method includes: sputtering step for sputtering aluminum and scandium under an atmosphere containing at least a nitrogen gas. In the sputtering step in the method according to the present invention, a scandium content rate falls within the range from 0.5% by atom to 50% by atom when a temperature of the substrate falls within the range from 5° C. to 450° C. during the sputtering step.
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