Invention Grant
US09246622B2 Semiconductor optical element, optical module and method of manufacturing semiconductor optical element
有权
半导体光学元件,光学模块以及制造半导体光学元件的方法
- Patent Title: Semiconductor optical element, optical module and method of manufacturing semiconductor optical element
- Patent Title (中): 半导体光学元件,光学模块以及制造半导体光学元件的方法
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Application No.: US14266872Application Date: 2014-05-01
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Publication No.: US09246622B2Publication Date: 2016-01-26
- Inventor: Asami Uchiyama , Koichi Akiyama , Yusuke Azuma , Yoshimichi Morita , Takeshi Yamatoya
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee: MITSUBISHI ELECTRIC CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Leydig, Voit & Mayer, Ltd.
- Priority: JP2013-201572 20130927
- Main IPC: H04J14/02
- IPC: H04J14/02 ; H04B10/70

Abstract:
A semiconductor optical element and an optical module in which extinction ratio variation among integrated optical modulation elements is reduced. An optical module has a wavelength multiplexer that multiplexes light respectively emerging from electric-field-absorption modulator (EAM) portions of integrated optical modulation elements, and that outputs the multiplexed light. The integrated optical modulation element has a signal input terminal, a laser element portion, and an EAM portion. Each of the integrated optical modulation elements has a difference between an oscillation wavelength and a barrier layer bandgap wavelength, represented as an LDBG wavelength difference. Variation of the LDBG wavelength differences is limited within a range of ±1 nm.
Public/Granted literature
- US20150093115A1 SEMICONDUCTOR OPTICAL ELEMENT, OPTICAL MODULE AND METHOD OF MANUFACTURING SEMICONDUCTOR OPTICAL ELEMENT Public/Granted day:2015-04-02
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