Invention Grant
- Patent Title: Carrier substrate and manufacturing method thereof
- Patent Title (中): 载体基板及其制造方法
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Application No.: US13966295Application Date: 2013-08-14
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Publication No.: US09247654B2Publication Date: 2016-01-26
- Inventor: Chun-Ting Lin
- Applicant: Unimicron Technology Corp.
- Applicant Address: TW Taoyuan
- Assignee: Unimicron Technology Corp.
- Current Assignee: Unimicron Technology Corp.
- Current Assignee Address: TW Taoyuan
- Agency: Jianq Chyun IP Office
- Priority: TW102116226U 20130507
- Main IPC: H05K1/11
- IPC: H05K1/11 ; H05K3/46 ; H05K3/40 ; H05K3/00

Abstract:
A carrier substrate includes a dielectric layer, a first circuit layer, an insulation layer, conductive blocks, and a first conductive structure. The dielectric layer has a first surface, a second surface, and blind vias. The first circuit layer is embedded in the first surface and the blind vias extend from the second surface to the first circuit layer. The insulation layer is disposed on the first surface and has a third surface, a fourth surface, and first openings. The first openings expose the first circuit layer and an aperture of each first opening is increased gradually from the third surface to the fourth surface. The conductive blocks fill the first openings and connect with the first circuit layer. The first conductive structure includes conductive vias filling the blind vias and a second circuit layer disposed on a portion of the second surface.
Public/Granted literature
- US20140332253A1 CARRIER SUBSTRATE AND MANUFACTURING METHOD THEREOF Public/Granted day:2014-11-13
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