Invention Grant
- Patent Title: Starting substrate for semiconductor engineering having substrate-through connections and a method for making same
- Patent Title (中): 具有基板通孔连接的半导体工程用起始衬底及其制造方法
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Application No.: US14112403Application Date: 2012-04-19
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Publication No.: US09249009B2Publication Date: 2016-02-02
- Inventor: Ulf Erlesand
- Applicant: Ulf Erlesand
- Applicant Address: SE Jarfalla
- Assignee: SILEX MICROSYSTEMS AB
- Current Assignee: SILEX MICROSYSTEMS AB
- Current Assignee Address: SE Jarfalla
- Agency: Young & Thompson
- Priority: SE1150356-2 20110421
- International Application: PCT/SE2012/050420 WO 20120419
- International Announcement: WO2012/144951 WO 20121026
- Main IPC: H01L21/04
- IPC: H01L21/04 ; B81B3/00 ; H01L29/423 ; H01L29/66 ; H01L29/78 ; H01L21/768 ; H01L23/48 ; B81C1/00
Abstract:
A substrate-through electrical connection (10) for connecting components on opposite sides of a substrate, and a method for making same. The connection includes a substrate-through via made from substrate material (10′). There is a trench (11) provided surrounding the via, the walls of the trench being coated with a layer of insulating material (12) and the trench (11) is filled with conductive or semi-conductive material (13). A doping region (15) for threshold voltage adjustment is provided in the via material in the surface of the inner trench wall between insulating material (12) and the material (10′) in the via. There are contacts (17′, 17″) to the via on opposite sides of the substrate, and a contact (18) to the conductive material (13) in the trench (11) so as to enable the application of a voltage to the conductive material (13).
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