Invention Grant
- Patent Title: Semiconductor thin film, semiconductor thin film manufacturing method and semiconductor element
- Patent Title (中): 半导体薄膜，半导体薄膜制造方法和半导体元件
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Application No.: US12598980Application Date: 2008-04-23
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Publication No.: US09249032B2Publication Date: 2016-02-02
- Inventor: Kazuyoshi Inoue , Futoshi Utsuno , Katsunori Honda
- Applicant: Kazuyoshi Inoue , Futoshi Utsuno , Katsunori Honda
- Applicant Address: JP Tokyo
- Assignee: IDEMITSU KOSAN CO., LTD.
- Current Assignee: IDEMITSU KOSAN CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Millen, White, Zelano & Branigan, P.C.
- Priority: JP2007-122513 20070507; JP2007-127132 20070511
- International Application: PCT/JP2008/057804 WO 20080423
- International Announcement: WO2008/139860 WO 20081120
- Main IPC: H01L29/10
- IPC: H01L29/10 ; C01G15/00 ; C01G9/02 ; C01G19/00 ; C01G19/02 ; C23C14/08 ; C23C14/58 ; H01L21/02 ; C03C17/23
Abstract:
An amorphous oxide thin film containing amorphous oxide is exposed to an oxygen plasma generated by exciting an oxygen-containing gas in high frequency. The oxygen plasma is preferably generated under the condition that applied frequency is 1 kHz or more and 300 MHz or less and pressure is 5 Pa or more. The amorphous oxide thin film is preferably exposed by a sputtering method, ion-plating method, vacuum deposition method, sol-gel method or fine particle application method.
Public/Granted literature
- US08785920B2 Semiconductor thin film, semiconductor thin film manufacturing method and semiconductor element Public/Granted day:2014-07-22
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