Invention Grant
US09249497B2 Ni alloy sputtering target, Ni alloy thin film and Ni silicide film
有权
Ni合金溅射靶,Ni合金薄膜和Ni硅化物膜
- Patent Title: Ni alloy sputtering target, Ni alloy thin film and Ni silicide film
- Patent Title (中): Ni合金溅射靶,Ni合金薄膜和Ni硅化物膜
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Application No.: US13635775Application Date: 2011-03-18
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Publication No.: US09249497B2Publication Date: 2016-02-02
- Inventor: Yasuhiro Yamakoshi , Kazumasa Ohashi
- Applicant: Yasuhiro Yamakoshi , Kazumasa Ohashi
- Applicant Address: JP Tokyo
- Assignee: JX Nippon Mining & Metals Corporation
- Current Assignee: JX Nippon Mining & Metals Corporation
- Current Assignee Address: JP Tokyo
- Agency: Howson & Howson LLP
- Priority: JP2010-064839 20100319
- International Application: PCT/JP2011/056589 WO 20110318
- International Announcement: WO2011/115259 WO 20110922
- Main IPC: C23C14/16
- IPC: C23C14/16 ; C22C19/05 ; C22C19/03 ; C23C14/34 ; C22C5/04

Abstract:
Provided is a Ni alloy sputtering target containing Pt in an amount of 5 to 30 at %, and one or more components selected from V, Al, Cr, Ti, Mo, and Si in a total amount of 1 to 5 at %, wherein the remainder is Ni and unavoidable impurities. The present invention is able to increase the low pass-through flux (PTF), which is a drawback of a Ni—Pt alloy having high magnetic permeability, increase the erosion area of the target which tends to be small as a result of the magnetic field lines being locally concentrated on the surface of the target during sputtering, and inhibit the difference between the portion where erosion is selectively advanced and the portion where erosion does not advance as much as the erosion progresses.
Public/Granted literature
- US20130032477A1 Ni ALLOY SPUTTERING TARGET, Ni ALLOY THIN FILM AND Ni SILICIDE FILM Public/Granted day:2013-02-07
Information query
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