Invention Grant
- Patent Title: Forming memory using high power impulse magnetron sputtering
- Patent Title (中): 使用高功率脉冲磁控溅射形成记忆
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Application No.: US12825091Application Date: 2010-06-28
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Publication No.: US09249498B2Publication Date: 2016-02-02
- Inventor: Yongjun Jeff Hu , Everett A. McTeer , John A. Smythe, III , Gurtej S. Sandhu
- Applicant: Yongjun Jeff Hu , Everett A. McTeer , John A. Smythe, III , Gurtej S. Sandhu
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: C23C14/34
- IPC: C23C14/34 ; C23C14/08 ; H01J37/34 ; H01L21/02 ; H01L45/00 ; C23C14/35
Abstract:
Forming memory using high power impulse magnetron sputtering is described herein. One or more method embodiments include forming a resistive memory material on a structure using high power impulse magnetron sputtering (HIPIMS), wherein the resistive memory material is formed on the structure in an environment having a temperature of approximately 400 degrees Celsius or less.
Public/Granted literature
- US20110315543A1 FORMING MEMORY USING HIGH POWER IMPULSE MAGNETRON SPUTTERING Public/Granted day:2011-12-29
Information query
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