Invention Grant
- Patent Title: Electro-polishing and porosification
- Patent Title (中): 电抛光和开孔
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Application No.: US14039597Application Date: 2013-09-27
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Publication No.: US09249523B2Publication Date: 2016-02-02
- Inventor: Seung Bum Rim
- Applicant: Seung Bum Rim
- Applicant Address: US CA San Jose
- Assignee: SunPower Corporation
- Current Assignee: SunPower Corporation
- Current Assignee Address: US CA San Jose
- Agency: Blakely Sokoloff Taylor Zafman LLP
- Main IPC: C25F3/30
- IPC: C25F3/30 ; C25F3/12 ; H01L21/02 ; H01L31/068 ; H01L31/18 ; C25F7/00

Abstract:
Forming a porous layer on a silicon substrate is disclosed. Forming the porous layer can include placing a silicon substrate in a first solution and conducting a first current through the silicon substrate. It can further include conducting a second current through the silicon substrate resulting in a porous layer on the silicon substrate.
Public/Granted literature
- US20150090605A1 ELECTRO-POLISHING AND POROSIFICATION Public/Granted day:2015-04-02
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