Method of manufacturing hollow-structure metal grating

Invention Grant

US09250369B2 Method of manufacturing hollow-structure metal grating 有权

Title translation: 制造中空结构金属光栅的方法

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Patent Title: Method of manufacturing hollow-structure metal grating
Patent Title (中): 制造中空结构金属光栅的方法
Application No.: US14262809

Application Date: 2014-04-28
Publication No.: US09250369B2

Publication Date: 2016-02-02
Inventor: Zhen-Dong Zhu , Qun-Qing Li , Ben-Feng Bai , Shou-Shan Fan
Applicant: Tsinghua University , HON HAI PRECISION INDUSTRY CO., LTD.
Applicant Address: CN Beijing TW New Taipei
Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
Current Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
Current Assignee Address: CN Beijing TW New Taipei
Agency: Novak Druce Connolly Bove + Quigg LLP
Priority: CN201310429909 20130922
Main IPC: H01L21/311
IPC: H01L21/311 ; G02B5/18

Method of manufacturing hollow-structure metal grating

Abstract:

A method for making a hollow-structure metal grating is provided. The method includes providing a substrate, forming a patterned mask layer on a surface of the substrate, applying a metal layer with a thickness greater than 10 nanometers on the patterned mask layer, and removing the patterned mask layer by a washing method using organic solvent. The patterned mask layer includes a plurality of first protruding structures and a plurality of first cavities arranged in intervals.

Abstract(Chinese):

提供了制造中空结构金属光栅的方法。该方法包括提供衬底，在衬底的表面上形成图案化的掩模层，在图案化掩模层上施加厚度大于10纳米的金属层，并通过使用有机溶剂的洗涤方法去除图案化掩模层。图案化掩模层包括多个第一突出结构和间隔设置的多个第一腔。

Public/Granted literature

US20150087153A1 METHOD OF MANUFACTURING HOWLLOW-STRUCTURE METAL GRATING Public/Granted day:2015-03-26

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3105	......后处理
H01L21/311	.......绝缘层的刻蚀