Invention Grant
US09250526B2 Composition for forming resist underlayer film, and pattern-forming method
有权
用于形成抗蚀剂下层膜的组合物和图案形成方法
- Patent Title: Composition for forming resist underlayer film, and pattern-forming method
- Patent Title (中): 用于形成抗蚀剂下层膜的组合物和图案形成方法
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Application No.: US13785466Application Date: 2013-03-05
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Publication No.: US09250526B2Publication Date: 2016-02-02
- Inventor: Tomoaki Seko , Fumihiro Toyokawa , Yuushi Matsumura , Tooru Kimura
- Applicant: JSR CORPORATION
- Applicant Address: JP Tokyo
- Assignee: JSR CORPORATION
- Current Assignee: JSR CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2012-050953 20120307; JP2013-010011 20130123
- Main IPC: G03F7/09
- IPC: G03F7/09 ; G03F7/11 ; G03F7/075
Abstract:
A composition for forming a resist underlayer film includes a polysiloxane, and an organic solvent composition. The organic solvent composition includes an alkylene glycol monoalkyl ether acetate having a standard boiling point of less than 150.0° C., and an organic solvent having a standard boiling point of no less than 150.0° C. In the organic solvent composition, a content of the alkylene glycol monoalkyl ether acetate is no less than 50% by mass and no greater than 99% by mass, and a content of the organic solvent is no less than 1% by mass and no greater than 50% by mass.
Public/Granted literature
- US20130233826A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, AND PATTERN-FORMING METHOD Public/Granted day:2013-09-12
Information query
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