- Patent Title: Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
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Application No.: US14549164Application Date: 2014-11-20
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Publication No.: US09250530B2Publication Date: 2016-02-02
- Inventor: Hideaki Tsubaki , Shinichi Kanna
- Applicant: FUJIFILM Corporation
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2006-347560 20061225; JP2007-103901 20070411; JP2007-117158 20070426; JP2007-325915 20071218
- Main IPC: G03F7/20
- IPC: G03F7/20 ; G03F7/30 ; G03F7/32 ; G03F7/039 ; G03F7/40
Abstract:
A pattern forming method, including: (A) coating a substrate with a positive resist composition of which solubility in a positive developer increases and solubility in a negative developer decreases upon irradiation with actinic rays or radiation, so as to form a resist film; (B) exposing the resist film; and (D) developing the resist film with a negative developer; a positive resist composition for multiple development used in the method; a developer for use in the method; and a rinsing solution for negative development used in the method.
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