Invention Grant
US09250532B2 Pattern forming method, multi-layered resist pattern, multi-layered film for organic solvent development, resist composition, method for manufacturing electronic device, and electronic device
有权
图案形成方法，多层抗蚀剂图案，有机溶剂显影用多层膜，抗蚀剂组合物，电子器件的制造方法和电子器件
- Patent Title: Pattern forming method, multi-layered resist pattern, multi-layered film for organic solvent development, resist composition, method for manufacturing electronic device, and electronic device
- Patent Title (中): 图案形成方法，多层抗蚀剂图案，有机溶剂显影用多层膜，抗蚀剂组合物，电子器件的制造方法和电子器件
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Application No.: US14141748Application Date: 2013-12-27
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Publication No.: US09250532B2Publication Date: 2016-02-02
- Inventor: Keita Kato , Michihiro Shirakawa , Tadahiro Odani , Atsushi Nakamura , Hidenori Takahashi , Kaoru Iwato
- Applicant: FUJIFILM Corporation
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2011-146861 20110630; JP2012-143050 20120626
- Main IPC: G03F7/26
- IPC: G03F7/26 ; G03F7/32 ; G03F7/095 ; G03F7/039
Abstract:
There is provided a pattern forming method comprising: (i) a step of forming a first film on a substrate by using a first resin composition (I), (ii) a step of forming a second film on the first film by using a second resin composition (II) different from the resin composition (I), (iii) a step of exposing a multi-layered film having the first film and the second film, and (iv) a step of developing the first film and the second film in the exposed multi-layered film by using an organic solvent-containing developer to form a negative pattern.
Public/Granted literature
Information query
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