Invention Grant
- Patent Title: Lithography method with combined optimization of radiated energy and design geometry
- Patent Title (中): 光刻方法，辐射能和设计几何结合优化
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Application No.: US13641128Application Date: 2011-04-13
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Publication No.: US09250540B2Publication Date: 2016-02-02
- Inventor: Serdar Manakli
- Applicant: Serdar Manakli
- Applicant Address: FR Paris
- Assignee: Commissariat A L'Energie Atomique et aux Energies Alternatives
- Current Assignee: Commissariat A L'Energie Atomique et aux Energies Alternatives
- Current Assignee Address: FR Paris
- Agency: Baker & Hostetler LLP
- Priority: FR1052862 20100415
- International Application: PCT/EP2011/055863 WO 20110413
- International Announcement: WO2011/128393 WO 20111020
- Main IPC: A61N5/00
- IPC: A61N5/00 ; G03B27/32 ; G03B27/54 ; G03F7/20 ; B82Y10/00 ; B82Y40/00 ; H01J37/317
Abstract:
A lithography method for a pattern to be etched on a support, notably to a method using electron radiation with direct writing on the support. Hitherto, the methods for correcting the proximity effects for dense network geometries (line spacings of 10 to 30 nm) have been reflected in a significant increase in the radiated doses and therefore in the exposure time. According to the invention, the patterns to be etched are modified as a function of the energy latitude of the process, which allows a reduction of the radiated doses.
Public/Granted literature
- US20130201468A1 LITHOGRAPHY METHOD WITH COMBINED OPTIMIZATION OF RADIATED ENERGY AND DESIGN GEOMETRY Public/Granted day:2013-08-08
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